STMicroelectronics STPSC10H12B2-TR
Manufacturer No:
STPSC10H12B2-TR
Manufacturer:
STMicroelectronics
Package:
Description:
DIODE SIL CARB 1200V 10A DPAK HV.Diode 1200 V 10A Surface Mount DPAK HV
Quantity:
In Stock :4067
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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STPSC10H12B2-TR Information
STMicroelectronics STPSC10H12B2-TR technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STPSC10H12B2-TR.
- Type
- Parameter
- Series
- ECOPACK®2
- Packaging
- Tape & Reel (TR), Cut Tape (CT)
- Part Status
- Active
- Manufacturer Lead Time
- 19 Weeks
- Capacitance @ Vr, F
- 725pF @ 0V, 1MHz
- Current - Average Rectified (Io)
- 10A
- Current - Reverse Leakage @ Vr
- 60 µA @ 1200 V
- Mounting Type
- Surface Mount
- Operating Temperature - Junction
- -40°C ~ 175°C
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Type
- Parameter
- Reverse Recovery Time (trr)
- 0 ns
- Speed
- No Recovery Time > 500mA (Io)
- Supplier Device Package
- DPAK HV
- Technology
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)
- 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
- ExportControlClassNumber
- EAR99
- HtsusCode
- 8541.10.0080
- MoistureSensitivityLevel
- 3 (168 Hours)
- ReachStatus
- REACH Unaffected
Download datasheets and manufacturer documentation for STMicroelectronics STPSC10H12B2-TR.
Data sheet:
Material Declaration:
This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature
Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1.
The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- Low VF
- DPAK HV creepage distance (anode to cathode) = 3 mm min.
- ECOPACK2 compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
