ST STP9NM50N

Manufacturer No:

STP9NM50N

Manufacturer:

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 560m ? @ 3.7A, 10V ±25V 570pF @ 50V 20nC @ 10V TO-220-3

Quantity:

In Stock :3594

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 8 - Sat, May 9, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP9NM50N Information

ST STP9NM50N technical specifications, attributes, parameters and parts with similar specifications to ST STP9NM50N.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
MDmesh?

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Type
Parameter

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STP9N

Pin Count
3

JESD-30 Code
R-PSFM-T3

Qualification Status
Not Qualified

Number of Elements
1

Power Dissipation-Max
70W Tc

Download datasheets and manufacturer documentation for ST STP9NM50N.

Datasheets:

stmicroelectronics-stf9nm50n-datasheets-8937.pdf

STP9NM50N Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 570pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).

STP9NM50N Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 30A.