ST STP90N4F3

Manufacturer No:

STP90N4F3

Manufacturer:

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 6.5m ? @ 40A, 10V ±20V 2200pF @ 25V 54nC @ 10V 40V TO-220-3

Quantity:

In Stock :3961

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP90N4F3 Information

ST STP90N4F3 technical specifications, attributes, parameters and parts with similar specifications to ST STP90N4F3.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
STripFET? III

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Type
Parameter

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STP90N

Pin Count
3

JESD-30 Code
R-PSFM-T3

Qualification Status
Not Qualified

Download datasheets and manufacturer documentation for ST STP90N4F3.

Datasheets:

stmicroelectronics-stp90n4f3-datasheets-8971.pdf

STP90N4F3 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.