STP80NF12-ST-Price, Stock & Datasheet

STP80NF12 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=120V. And this device has 120V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 134 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STP80NF12 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 134 ns
a threshold voltage of 2V