ST STP80NE06-10
Manufacturer No:
STP80NE06-10
Manufacturer:
ST
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 10m ? @ 40A, 10V ±20V 10000pF @ 25V 140nC @ 10V TO-220-3
Quantity:
In Stock :1437
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP80NE06-10 Information
ST STP80NE06-10 technical specifications, attributes, parameters and parts with similar specifications to ST STP80NE06-10.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Current Rating
- 80A
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STP80N
Download datasheets and manufacturer documentation for ST STP80NE06-10.
STP80NE06-10 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STP80NE06-10 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 320A.
STP80NE06-10 Applications
There are a lot of STMicroelectronics
STP80NE06-10 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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