ST STP60N043DM9

Manufacturer No:

STP60N043DM9

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 43mOhm @ 28A, 10V ±30V 4675 pF @ 400 V 78.6 nC @ 10 V 600 V TO-220-3

Quantity:

In Stock :3222

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP60N043DM9 Information

ST STP60N043DM9 technical specifications, attributes, parameters and parts with similar specifications to ST STP60N043DM9.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220

Mfr
STMicroelectronics

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
245W (Tc)

Base Product Number
STP60N

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
43mOhm @ 28A, 10V

Vgs(th) (Max) @ Id
4.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
4675 pF @ 400 V

Current - Continuous Drain (Id) @ 25°C
56A (Tc)

Gate Charge (Qg) (Max) @ Vgs
78.6 nC @ 10 V

Drain to Source Voltage (Vdss)
600 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for ST STP60N043DM9.

STP60N043DM9 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4675 pF @ 400 V.This transistor requires a drain-source voltage (Vdss) of 600 V.