ST STP4N52K3
Manufacturer No:
STP4N52K3
Manufacturer:
ST
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 2.6 ? @ 1.25A, 10V ±30V 334pF @ 100V 11nC @ 10V TO-220-3
Quantity:
In Stock :8057
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP4N52K3 Information
ST STP4N52K3 technical specifications, attributes, parameters and parts with similar specifications to ST STP4N52K3.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- SuperMESH3?
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 2.6Ohm
- Additional Feature
- ULTRA-LOW RESISTANCE
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for ST STP4N52K3.
STP4N52K3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 334pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.5A.With a drain-source breakdown voltage of 525V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 525V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.75V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STP4N52K3 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3.75V
STP4N52K3 Applications
There are a lot of STMicroelectronics
STP4N52K3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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