ST STP360N4F6
Manufacturer No:
STP360N4F6
Manufacturer:
ST
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.8m ? @ 60A, 10V ±20V 17930pF @ 25V 340nC @ 10V TO-220-3
Quantity:
In Stock :7630
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP360N4F6 Information
ST STP360N4F6 technical specifications, attributes, parameters and parts with similar specifications to ST STP360N4F6.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- Automotive, AEC-Q101, DeepGATE?, STripFET? VI
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Resistance
- 1.8mOhm
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STP360
- Number of Channels
- 1
- Power Dissipation-Max
- 300W Tc
- Element Configuration
- Single
- Power Dissipation
- 300W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1.8m ? @ 60A, 10V
Download datasheets and manufacturer documentation for ST STP360N4F6.
STP360N4F6 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 17930pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP360N4F6 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
STP360N4F6 Applications
There are a lot of STMicroelectronics
STP360N4F6 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
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