ST STP18NM60ND

Manufacturer No:

STP18NM60ND

Manufacturer:

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 290m ? @ 6.5A, 10V ±25V 1030pF @ 50V 34nC @ 10V 600V TO-220-3

Quantity:

In Stock :2403

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Expected Shipping：Thu, May 14 - Fri, May 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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STP18NM60ND Information

ST STP18NM60ND technical specifications, attributes, parameters and parts with similar specifications to ST STP18NM60ND.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

Series
FDmesh? II

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

ECCN Code
EAR99

Resistance
290mOhm

Technology
MOSFET (Metal Oxide)

Base Part Number
STP18N

Number of Elements
1

Power Dissipation-Max
110W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
130W

Download datasheets and manufacturer documentation for ST STP18NM60ND.

Datasheets:

stmicroelectronics-stp18nm60nd-datasheets-7263.pdf

STP18NM60ND Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 187 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1030pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

STP18NM60ND Features

the avalanche energy rating (Eas) is 187 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 52A.
a 600V drain to source voltage (Vdss)