ST STP18N60M6

Manufacturer No:

STP18N60M6

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 280m ? @ 6.5A, 10V ±25V 650pF @ 100V 16.8nC @ 10V 600V TO-220-3

Quantity:

In Stock :8720

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP18N60M6 Information

ST STP18N60M6 technical specifications, attributes, parameters and parts with similar specifications to ST STP18N60M6.

Type
Parameter

Factory Lead Time
16 Weeks

Mounting Type
Through Hole

Package / Case
TO-220-3

Operating Temperature
-55°C~150°C TJ

Series
MDmesh? M6

Part Status
Active

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Type
Parameter

Power Dissipation-Max
110W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
280m ? @ 6.5A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
650pF @ 100V

Current - Continuous Drain (Id) @ 25°C
13A Tc

Gate Charge (Qg) (Max) @ Vgs
16.8nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STP18N60M6.

Datasheets:

stmicroelectronics-stp18n60m6-datasheets-1349.pdf

STP18N60M6 Description

The STP18N60M6 is an N-channel 600 V, 230 m? typ., 13 A, MDmesh? M6 Power MOSFET in a TO-220 package. The most recent improvements to the well-known and consolidated MDmesh family of SJ MOSFETs are incorporated into the new MDmesh? M6 technology.

With its brand-new M6 technology, STMicroelectronics improves on the previous generation of MDmesh devices by combining great RDS(on) per area improvement with one of the most efficient switching behaviors available, as well as a user-friendly interface for optimal end-application efficiency.