ST STP13N60DM2

Manufacturer No:

STP13N60DM2

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 365m ? @ 5.5A, 10V ±25V 730pF @ 100V 19nC @ 10V 600V TO-220-3

Quantity:

In Stock :9618

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP13N60DM2 Information

ST STP13N60DM2 technical specifications, attributes, parameters and parts with similar specifications to ST STP13N60DM2.

Type
Parameter

Factory Lead Time
17 Weeks

Mounting Type
Through Hole

Package / Case
TO-220-3

Operating Temperature
-55°C~150°C TJ

Series
MDmesh? DM2

Part Status
Active

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Type
Parameter

Power Dissipation-Max
110W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
365m ? @ 5.5A, 10V

Vgs(th) (Max) @ Id
5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
730pF @ 100V

Current - Continuous Drain (Id) @ 25°C
11A Tc

Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STP13N60DM2.

Datasheets:

stmicroelectronics-stp13n60dm2-datasheets-1066.pdf

STP13N60DM2 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 730pF @ 100V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).