STP120NH03L-ST-Price, Stock & Datasheet

STP120NH03L Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4100pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

STP120NH03L Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 48 ns
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)