ST STP11NM60ND
ST STP11NM60ND

ST STP11NM60ND

Manufacturer No:

STP11NM60ND

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 450m ? @ 5A, 10V ±25V 850pF @ 50V 30nC @ 10V TO-220-3

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DHL

In Stock :1369

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Shipped from：HK Warehouse
Expected Shipping：Sat, May 9 - Sun, May 10, 2026
Date Code：Within 2 Years

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP11NM60ND Information

ST STP11NM60ND technical specifications, attributes, parameters and parts with similar specifications to ST STP11NM60ND.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
  • 16 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tube
  • Type
  • Parameter
  • Series
  • FDmesh? II
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Resistance
  • 450mOhm
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Base Part Number
  • STP11N
  • Pin Count
  • 3

Download datasheets and manufacturer documentation for ST STP11NM60ND.

Datasheets:

STP11NM60ND Description


STP11NM60ND, in a family of superjunction FDmesh ?, is a 600V N-channel MOSFET transistor. The new FDmesh superjunction architecture incorporates a vertical structure within a conventional strip MOSFET structure, while also incorporating a faster and more reliable intrinsic body diode. In addition to reducing on-resistance and recovery time, these technical improvements can further improve switching efficiency and reduce drive losses by reducing gate capacitance, gate charge, and gate input resistance. Improved reliability during switching, especially in bridge topologies, including zero-voltage switching (ZVS) structures at low loads, enables new products with high dv/dt values.


STP11NM60ND Features


Fast switching
Very low on-resistance
100% avalanche tested
Higher thermal management efficiency
More package options and current performance


STP11NM60ND Applications


Switching applications
Bridge topologies
ZVS phase-shift converters

STP11NM60ND Relevant information

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