ST STP110N8F7

Manufacturer No:

STP110N8F7

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 7.5m ? @ 40A, 10V ±20V 3435pF @ 40V 46.8nC @ 10V 80V TO-220-3

Quantity:

In Stock :2604

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STP110N8F7 Information

ST STP110N8F7 technical specifications, attributes, parameters and parts with similar specifications to ST STP110N8F7.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
STripFET?

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

ECCN Code
EAR99

Type
Parameter

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STP110

Power Dissipation-Max
170W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
7.5m ? @ 40A, 10V

Vgs(th) (Max) @ Id
4.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
3435pF @ 40V

Current - Continuous Drain (Id) @ 25°C
80A Tc

Download datasheets and manufacturer documentation for ST STP110N8F7.

Datasheets:

stmicroelectronics-stl8dn6lf6ag-datasheets-5453.pdf

stmicroelectronics-stp110n8f7-datasheets-0169.pdf

STP110N8F7 Description

This N-channel power MOSFET uses STripFET STripFET F7 technology and an enhanced grooved gate structure to achieve extremely low on-resistance while reducing internal capacitance and gate charge for faster and more efficient switching.