ST STP110N55F6
Manufacturer No:
STP110N55F6
Manufacturer:
ST
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 5.2m ? @ 60A, 10V ±20V 8350pF @ 25V 120nC @ 10V TO-220-3
Quantity:
In Stock :8377
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP110N55F6 Information
ST STP110N55F6 technical specifications, attributes, parameters and parts with similar specifications to ST STP110N55F6.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- DeepGATE?, STripFET? VI
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- Not Applicable
- ECCN Code
- EAR99
- Type
- Parameter
- Terminal Finish
- Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STP110
- Number of Elements
- 1
- Configuration
- Single
- Power Dissipation-Max
- 150W Tc
- Power Dissipation
- 150W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 5.2m ? @ 60A, 10V
Download datasheets and manufacturer documentation for ST STP110N55F6.
STP110N55F6 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 110A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STP110N55F6 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
STP110N55F6 Applications
There are a lot of STMicroelectronics
STP110N55F6 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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