

ST STP110N10F7
Manufacturer No:
STP110N10F7
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 7m ? @ 55A, 10V ±20V 5500pF @ 50V 60nC @ 10V TO-220-3
Quantity:


In Stock :1888
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP110N10F7 Information
ST STP110N10F7 technical specifications, attributes, parameters and parts with similar specifications to ST STP110N10F7.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- DeepGATE?, STripFET? VII
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- ECCN Code
- EAR99
- Resistance
- 7mOhm
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STP110
- Power Dissipation-Max
- 150W Tc
- Element Configuration
- Single
- Power Dissipation
- 150W
- Turn On Delay Time
- 25 ns
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for ST STP110N10F7.
The STP110N10F7 device utilizes the 7th generation of design rules of ST?s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
STP110N10F7 Features
? Ultra low on-resistance
? 100% avalanche tested
? STM power MOSFETs
? In a TO-220 housing
? ROHS3 Compliant
? Lead Free
STP110N10F7 Applications
? Switching applications
? Medical
? New Energy Vehicle
? Photovoltaic & Wind Power Generation
? Smart Grid
STP110N10F7 Relevant information
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