ST STLD128DNT4
ST STLD128DNT4

ST STLD128DNT4

Manufacturer No:

STLD128DNT4

Manufacturer:

ST

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

NPN 150°C TJ 250?A 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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STLD128DNT4 information

ST STLD128DNT4 technical specifications, attributes, parameters and parts with similar specifications to ST STLD128DNT4.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
  • 8 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 2
  • ECCN Code
  • EAR99
  • Subcategory
  • Other Transistors
  • Max Power Dissipation
  • 20W
  • Terminal Form
  • GULL WING
  • Base Part Number
  • STLD128
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSSO-G2
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 20W
  • Case Connection
  • COLLECTOR
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 400V
  • Max Collector Current
  • 3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 8 @ 2A 5V
  • Current - Collector Cutoff (Max)
  • 250?A
  • Vce Saturation (Max) @ Ib, Ic
  • 1V @ 400mA, 2A
  • Collector Emitter Breakdown Voltage
  • 400V
  • Current - Collector (Ic) (Max)
  • 4A
  • Max Breakdown Voltage
  • 400V
  • Emitter Base Voltage (VEBO)
  • 9V
  • hFE Min
  • 8
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ST STLD128DNT4.

STLD128DNT4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.When VCE saturation is 1V @ 400mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

STLD128DNT4 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 1V @ 400mA, 2A
the emitter base voltage is kept at 9V


STLD128DNT4 Applications


There are a lot of STMicroelectronics
STLD128DNT4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

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Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.