ST STL35N6F3
Manufacturer No:
STL35N6F3
Manufacturer:
ST
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22m ? @ 3A, 10V ±20V 8-PowerVDFN
Quantity:
In Stock :1374
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STL35N6F3 Information
ST STL35N6F3 technical specifications, attributes, parameters and parts with similar specifications to ST STL35N6F3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- STripFET? III
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Resistance
- 22MOhm
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Base Part Number
- STL35
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ST STL35N6F3.
STL35N6F3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 409 mJ.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 35A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL35N6F3 Features
the avalanche energy rating (Eas) is 409 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
STL35N6F3 Applications
There are a lot of STMicroelectronics
STL35N6F3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
