STL25N15F3-ST-Price, Stock & Datasheet

STL25N15F3 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The maximum input capacitance of this device is 1300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 25A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STL25N15F3 Features

the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 24A.