ST STI33N60M6

Manufacturer No:

STI33N60M6

Manufacturer:

ST

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel 125mOhm @ 12.5A, 10V ±25V 1515 pF @ 100 V 33.4 nC @ 10 V 600 V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :4190

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STI33N60M6 Information

ST STI33N60M6 technical specifications, attributes, parameters and parts with similar specifications to ST STI33N60M6.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Supplier Device Package
I2PAK (TO-262)

Mfr
STMicroelectronics

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
190W (Tc)

Base Product Number
STI33

Series
MDmesh? M6

Type
Parameter

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1515 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
25A (Tc)

Gate Charge (Qg) (Max) @ Vgs
33.4 nC @ 10 V

Drain to Source Voltage (Vdss)
600 V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STI33N60M6.

STI33N60M6 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1515 pF @ 100 V.Operating this transistor requires a 600 V drain to source voltage (Vdss).