ST STI13005-1

Manufacturer No:

STI13005-1

Manufacturer:

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Description:

NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

Quantity:

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In Stock :Available

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STI13005-1 information

ST STI13005-1 technical specifications, attributes, parameters and parts with similar specifications to ST STI13005-1.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Matte Tin (Sn) - annealed

Subcategory
Other Transistors

Max Power Dissipation
30W

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STI1300

Pin Count
3

JESD-30 Code
R-PSIP-T3

Qualification Status
Not Qualified

Number of Elements
1

Element Configuration
Single

Power Dissipation
30W

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
400V

Max Collector Current
3A

DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V

Current - Collector Cutoff (Max)
1mA

Vce Saturation (Max) @ Ib, Ic
5V @ 750mA, 3A

Collector Emitter Breakdown Voltage
400V

Collector Emitter Saturation Voltage
500mV

Emitter Base Voltage (VEBO)
9V

hFE Min
15

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for ST STI13005-1.

Datasheets:

stmicroelectronics-sti130051-datasheets-3493.pdf

STI13005-1 Overview

In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 750mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

STI13005-1 Features

the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 5V @ 750mA, 3A
the emitter base voltage is kept at 9V

STI13005-1 Applications

There are a lot of STMicroelectronics
STI13005-1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.