ST STI10NM60N

Manufacturer No:

STI10NM60N

Manufacturer:

ST

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 550m ? @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :1592

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STI10NM60N Information

ST STI10NM60N technical specifications, attributes, parameters and parts with similar specifications to ST STI10NM60N.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins
3

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
MDmesh? II

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

ECCN Code
EAR99

Type
Parameter

Technology
MOSFET (Metal Oxide)

Base Part Number
STI10N

Power Dissipation-Max
70W Tc

Element Configuration
Single

Power Dissipation
70W

Turn On Delay Time
10 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
550m ? @ 4A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
540pF @ 50V

Download datasheets and manufacturer documentation for ST STI10NM60N.

Datasheets:

stmicroelectronics-stu10nm60n-datasheets-5644.pdf

STI10NM60N Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 540pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

STI10NM60N Features

a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 32 ns
a 600V drain to source voltage (Vdss)