ST STH80N10LF7-2AG

Manufacturer No:

STH80N10LF7-2AG

Manufacturer:

ST

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m ? @ 40A, 10V ±20V 2900pF @ 25V 28.3nC @ 4.5V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :1701

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STH80N10LF7-2AG Information

ST STH80N10LF7-2AG technical specifications, attributes, parameters and parts with similar specifications to ST STH80N10LF7-2AG.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)

Factory Lead Time
17 Weeks

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
Automotive, AEC-Q101, STripFET?

Part Status
Active

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Type
Parameter

Reach Compliance Code
compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Power Dissipation-Max
110W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
10m ? @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V

Current - Continuous Drain (Id) @ 25°C
80A Tc

Gate Charge (Qg) (Max) @ Vgs
28.3nC @ 4.5V

Drain to Source Voltage (Vdss)
100V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Download datasheets and manufacturer documentation for ST STH80N10LF7-2AG.

STH80N10LF7-2AG Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2900pF @ 25V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.