ST STH6N95K5-2
Manufacturer No:
STH6N95K5-2
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.25 ? @ 3A, 10V ±30V 450pF @ 100V 13nC @ 10V 950V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1491
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STH6N95K5-2 Information
ST STH6N95K5-2 technical specifications, attributes, parameters and parts with similar specifications to ST STH6N95K5-2.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- MDmesh? K5
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STH6N
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ST STH6N95K5-2.
STH6N95K5-2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 100V.This device conducts a continuous drain current (ID) of 6A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 24A.A normal operation of the DS requires keeping the breakdown voltage above 950V.This transistor requires a drain-source voltage (Vdss) of 950V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STH6N95K5-2 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 950V drain to source voltage (Vdss)
STH6N95K5-2 Applications
There are a lot of STMicroelectronics
STH6N95K5-2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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