ST STH245N75F3-6
Manufacturer No:
STH245N75F3-6
Manufacturer:
ST
Package:
TO-263-7, D2Pak (6 Leads + Tab)
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3m ? @ 90A, 10V ±20V 6800pF @ 25V 87nC @ 10V 75V TO-263-7, D2Pak (6 Leads + Tab)
Quantity:
In Stock :4477
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STH245N75F3-6 Information
ST STH245N75F3-6 technical specifications, attributes, parameters and parts with similar specifications to ST STH245N75F3-6.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Cut Tape (CT)
- Series
- Automotive, AEC-Q101, STripFET? F3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STH245
- Number of Elements
- 1
- Power Dissipation-Max
- 300W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ST STH245N75F3-6.
STH245N75F3-6 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 720A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STH245N75F3-6 Features
a continuous drain current (ID) of 180A
the turn-off delay time is 100 ns
based on its rated peak drain current 720A.
a 75V drain to source voltage (Vdss)
STH245N75F3-6 Applications
There are a lot of STMicroelectronics
STH245N75F3-6 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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