STH240N75F3-2-ST-Price, Stock & Datasheet

STH240N75F3-2 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 75V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 75V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Peak drain current for this device is 720A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STH240N75F3-2 Features

the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 720A.