ST STH240N10F7-6

Manufacturer No:

STH240N10F7-6

Manufacturer:

ST

Package:

H2PAK-7/6

Description:

N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package

Quantity:

In Stock :1989

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STH240N10F7-6 Information

ST STH240N10F7-6 technical specifications, attributes, parameters and parts with similar specifications to ST STH240N10F7-6.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
STMICROELECTRONICS

Package Description
H2PAK-7/6

Reach Compliance Code
not_compliant

ECCN Code
EAR99

Factory Lead Time
26 Weeks

Samacsys Manufacturer
STMicroelectronics

Additional Feature
ULTRA LOW RESISTANCE

Avalanche Energy Rating (Eas)
500 mJ

Type
Parameter

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
100 V

Drain Current-Max (ID)
180 A

Drain-source On Resistance-Max
0.0025 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JESD-30 Code
R-PSSO-G6

JESD-609 Code
e3

Moisture Sensitivity Level
1

Number of Elements
1

Download datasheets and manufacturer documentation for ST STH240N10F7-6.

Datasheets:

en.DM00111318.pdf

STH240N10F7-6 Description

The STH240N10F7-6 is an N-channel 100 V, 2 m? typ., 180 A STripFET? F7 Power MOSFETs in an H²PAK-2 and H²PAK-6 packages. These STripFET? F7-enabled N-channel Power MOSFETs have an improved trench gate structure that results in very low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.