STMicroelectronics STH12N120K5-2AG

Manufacturer No:

STH12N120K5-2AG

Manufacturer:

STMicroelectronics

Package:

Description:

Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Quantity:

In Stock :4572

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Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

STH12N120K5-2AG Information

STMicroelectronics STH12N120K5-2AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH12N120K5-2AG.

Type
Parameter

Series
MDmesh™ K5

Packaging
Tape & Reel (TR), Cut Tape (CT)

Part Status
Active

Manufacturer Lead Time
14 Weeks

Current - Continuous Drain (Id) @ 25°C
12A (Tc)

Drain to Source Voltage (Vdss)
1200 V

Drive Voltage (Max Rds On, Min Rds On)
10V

FET Type
N-Channel

Gate Charge (Qg) (Max) @ Vgs
44.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 100 V

Type
Parameter

Mounting Type
Surface Mount

Operating Temperature
-55°C ~ 150°C (TJ)

Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Power Dissipation (Max)
250W (Tc)

Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 10V

Supplier Device Package
H2PAK-2

Technology
MOSFET (Metal Oxide)

Vgs (Max)
±30V

Vgs(th) (Max) @ Id
5V @ 100µA

ExportControlClassNumber
EAR99

Download datasheets and manufacturer documentation for STMicroelectronics STH12N120K5-2AG.

Data sheet:

b0732a92d6e7dbbaea6264e47a4bf690.pdf

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features