ST STGWA40H120F2
Manufacturer No:
STGWA40H120F2
Manufacturer:
ST
Package:
,
Description:
Description: Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Quantity:
In Stock :5864
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STGWA40H120F2 Information
ST STGWA40H120F2 technical specifications, attributes, parameters and parts with similar specifications to ST STGWA40H120F2.
- Type
- Parameter
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- STMICROELECTRONICS
- Package Description
- ,
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 15 Weeks
- Samacsys Manufacturer
- STMicroelectronics
- Case Connection
- COLLECTOR
- Collector Current-Max (IC)
- 80 A
- Collector-Emitter Voltage-Max
- 1200 V
- Type
- Parameter
- Configuration
- SINGLE
- Gate-Emitter Thr Voltage-Max
- 7 V
- Gate-Emitter Voltage-Max
- 20 V
- JEDEC-95 Code
- TO-247
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Temperature-Max
- 175 °C
- Operating Temperature-Min
- -55 °C
- Package Body Material
- PLASTIC/EPOXY
Download datasheets and manufacturer documentation for ST STGWA40H120F2.
Datasheets:
STGWA40H120F2 Description
The STGWA40H120F2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The transistor STGWA40H120F2 is a part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VcE(sat) temperature coefficient and very tight parameter distribution result in
safer paralleling operation.
STGWA40H120F2 Features
Maximum junction temperature: Tj= 175 °C
High-speed switching series
Minimized tail current
VcE(sat)= 2.1 V (typ.)@lc=40 A
5 ?s minimum short-circuit withstand time at Tj= 150 °C
Safe paralleling
Low thermal resistance
STGWA40H120F2 Applications
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High-frequency converters
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12.28 M
Listed Part Number
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In-stock SKU
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