STMicroelectronics STGAP3S6I
Manufacturer No:
STGAP3S6I
Manufacturer:
STMicroelectronics
Package:
Description:
Galvanically isolated gate driver for IGBTs with 6 A Source/Sink current, desaturation protection and adjustable SOFTOFF
Quantity:
In Stock :6347
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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STGAP3S6I Information
STMicroelectronics STGAP3S6I technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGAP3S6I.
- Type
- Parameter
- Operating Range
- Industrial
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tube
- RoHS Status
- Grade
- Industrial
- Package Name
- SO-16W
- Operating Range
- Industrial
- Type
- Parameter
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tube
- RoHS Status
- Grade
- Industrial
- Package Name
- SO-16W
Download datasheets and manufacturer documentation for STMicroelectronics STGAP3S6I.
Data sheet:
The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO variants for SiC MOSFETs and IGBTs.
Ultrafast desaturation protection is also available with differentiated intervention thresholds and adjustable soft turn-off.
The availability of the Miller CLAMP and optional negative driving enables optimal driving performance.
- High voltage rail up to 1200 V
- Driver current capability: 6/10 A sink/source @25 °C
- ±200 V/ns Common Mode Transient Immunity (CMTI)
- 75 ns input-output propagation delay
- Miller CLAMP driver for external N-channel MOSFET 0.3 A source/0.5 A sink
- Adjustable soft turn-off function
- VDD UVLO
- VH UVLO: IGBT and SiC variants
- Desaturation protection: IGBT and SiC variants
- Gate driving voltage up to 32 V
- Negative gate driving voltage up to -10 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shutdown protection
- Reinforced galvanic isolation:
- Isolation voltage VISO =
5.7 kVRMS (UL 1577) - Transient Overvoltage VIOTM =
8 kVPEAK (IEC 60747-17) - Max. Repetitive Isolation Voltage VIORM =
1.2 kVPEAK (IEC 60747-17)
- Isolation voltage VISO =
- Wide body SO-16W package
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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