ST STF8NM60N

Manufacturer No:

STF8NM60N

Manufacturer:

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 650m ? @ 3.5A, 10V ±25V 560pF @ 50V 19nC @ 10V TO-220-3 Full Pack

Quantity:

In Stock :8197

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Shipped from：HK Warehouse

Expected Shipping：Tue, May 12 - Wed, May 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STF8NM60N Information

ST STF8NM60N technical specifications, attributes, parameters and parts with similar specifications to ST STF8NM60N.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
MDmesh? II

JESD-609 Code
e3

Pbfree Code
yes

Type
Parameter

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
MATTE TIN

Additional Feature
AVALANCHE RATED

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STF8N

Download datasheets and manufacturer documentation for ST STF8NM60N.

Datasheets:

stmicroelectronics-std8nm60n1-datasheets-8916.pdf

STF8NM60N Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 560pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STF8NM60N Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 28A.