STF7N52DK3-ST-Price, Stock & Datasheet

STF7N52DK3 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6A amps.In this device, the drain-source breakdown voltage is 525V and VGS=525V, so the drain-source breakdown voltage is 525V in this case.A device can conduct a maximum continuous current of [6A] according to its drain current.It is [37 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 24A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3.75V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STF7N52DK3 Features

the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 24A.
a threshold voltage of 3.75V