

ST STF57N65M5
Manufacturer No:
STF57N65M5
Manufacturer:
ST
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 63m ? @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-220-3 Full Pack
Quantity:


In Stock :7973
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STF57N65M5 Information
ST STF57N65M5 technical specifications, attributes, parameters and parts with similar specifications to ST STF57N65M5.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 17 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- MDmesh? V
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 63mOhm
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STF57N
- Number of Elements
- 1
- Power Dissipation-Max
- 40W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ST STF57N65M5.
STF57N65M5 Description
These products are N-channel MDmeshTM V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESHTM horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that call for great power density and exceptional efficiency since it has an extraordinarily low onresistance that is unmatched among silicon-based Power MOSFETs.
STF57N65M5 Features
Worldwide best RDS(on)*area amongst the silicon based devices
Higher VDSS rating, high dv/dt capability
Excellent switching performance
Easy to drive, 100% avalanche tested
STF57N65M5 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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