ST STF40NF03L

Manufacturer No:

STF40NF03L

Manufacturer:

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 22m ? @ 20A, 10V ±16V 770pF @ 25V 15nC @ 4.5V TO-220-3 Full Pack

Quantity:

In Stock :4389

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Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

STF40NF03L Information

ST STF40NF03L technical specifications, attributes, parameters and parts with similar specifications to ST STF40NF03L.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
STripFET?

JESD-609 Code
e3

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - annealed

Additional Feature
LOW THRESHOLD

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Download datasheets and manufacturer documentation for ST STF40NF03L.

Datasheets:

stmicroelectronics-stp40nf03l-datasheets-7588.pdf

STF40NF03L Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 770pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

STF40NF03L Features

the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 92A.