ST STF3LN62K3
Manufacturer No:
STF3LN62K3
Manufacturer:
ST
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 3 ? @ 1.25A, 10V ±30V 386pF @ 50V 17nC @ 10V TO-220-3 Full Pack
Quantity:
In Stock :2703
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STF3LN62K3 Information
ST STF3LN62K3 technical specifications, attributes, parameters and parts with similar specifications to ST STF3LN62K3.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Series
- SuperMESH3?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 3Ohm
- Additional Feature
- ULTRA-LOW RESISTANCE
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STF3LN
- Pin Count
- 3
- Number of Elements
- 1
- Power Dissipation-Max
- 20W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ST STF3LN62K3.
STF3LN62K3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 386pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF3LN62K3 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3.75V
STF3LN62K3 Applications
There are a lot of STMicroelectronics
STF3LN62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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