STF34NM60ND-ST-Price, Stock & Datasheet

STF34NM60ND Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2785pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 111 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 116A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STF34NM60ND Features

a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 111 ns
based on its rated peak drain current 116A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)