STMicroelectronics STDRIVEG611QTR
Manufacturer No:
STDRIVEG611QTR
Manufacturer:
STMicroelectronics
Package:
Description:
High voltage and high-speed half-bridge gate driver for GaN power switches
Quantity:
In Stock :9853
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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STDRIVEG611QTR Information
STMicroelectronics STDRIVEG611QTR technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STDRIVEG611QTR.
- Type
- Parameter
- Operating Range
- Industrial
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 150.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Grade
- Industrial
- Package Name
- QFN-18L
- Operating Range
- Industrial
- Type
- Parameter
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 150.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Grade
- Industrial
- Package Name
- QFN-18L
Download datasheets and manufacturer documentation for STMicroelectronics STDRIVEG611QTR.
The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.
The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
- High voltage rail up to 600 V
- dV/dt transient immunity ±200 V/ns
- Driver with separated sink and source path for optimal driving:
- 2.4 A and
1.2 Ω sink - 1.0 A and
3.7 Ω source
- 2.4 A and
- High-side and low-side linear regulators for 6 V gate driving voltage
- Fast high-side startup time: 5 µs
- 45 ns propagation delay, 15 ns minimum output pulse
- High switching frequency (> 1 MHz)
- Embedded 600 V bootstrap diode
- Full support of GaN hard-switching operation
- Comparator for overcurrent detection with Smart Shutdown
- UVLO function on VCC, VHS, and VLS
- Separated logic inputs and shutdown pin
- Fault pin for overcurrent, overtemperature and UVLO reporting
- Stand-by function for low consumption mode
- Separated PGND for Kelvin source driving and current shunt compatibility
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
