ST STD95N4LF3
Manufacturer No:
STD95N4LF3
Manufacturer:
ST
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m ? @ 40A, 10V ±16V 2500pF @ 25V 70nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :6504
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STD95N4LF3 Information
ST STD95N4LF3 technical specifications, attributes, parameters and parts with similar specifications to ST STD95N4LF3.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- STripFET? III
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Resistance
- 6MOhm
- Terminal Finish
- Matte Tin (Sn) - annealed
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ST STD95N4LF3.
STD95N4LF3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD95N4LF3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
STD95N4LF3 Applications
There are a lot of STMicroelectronics
STD95N4LF3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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