ST STD5NM60-1

Manufacturer No:

STD5NM60-1

Manufacturer:

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 1 ? @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

Quantity:

In Stock :2589

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STD5NM60-1 Information

ST STD5NM60-1 technical specifications, attributes, parameters and parts with similar specifications to ST STD5NM60-1.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)

Factory Lead Time
26 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
MDmesh?

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Subcategory
FET General Purpose Power

Voltage - Rated DC
650V

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for ST STD5NM60-1.

Datasheets:

stmicroelectronics-std5nm601-datasheets-7777.pdf

STD5NM60-1 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STD5NM60-1 Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V