ST STD3NM60T4
Manufacturer No:
STD3NM60T4
Manufacturer:
ST
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.5 ? @ 1.5A, 10V ±30V 324pF @ 25V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :2801
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STD3NM60T4 Information
ST STD3NM60T4 technical specifications, attributes, parameters and parts with similar specifications to ST STD3NM60T4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -65°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- MDmesh?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Resistance
- 1.5Ohm
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ST STD3NM60T4.
STD3NM60T4 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 324pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STD3NM60T4 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
STD3NM60T4 Applications
There are a lot of STMicroelectronics
STD3NM60T4 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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