ST STD3LN62K3

Manufacturer No:

STD3LN62K3

Manufacturer:

ST

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3 ? @ 1.25A, 10V ±30V 386pF @ 50V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :3549

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Shipping & Availability

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Shipped from：HK Warehouse

Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STD3LN62K3 Information

ST STD3LN62K3 technical specifications, attributes, parameters and parts with similar specifications to ST STD3LN62K3.

Type
Parameter

Lifecycle Status
NRND (Last Updated: 7 months ago)

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type
Surface Mount

Mount
Surface Mount

Number of Pins
3

Transistor Element Material
SILICON

Series
SuperMESH3?

Packaging
Tape & Reel (TR)

Operating Temperature
150°C TJ

Part Status
Active

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Resistance
3Ohm

Additional Feature
ULTRA-LOW RESISTANCE

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Base Part Number
STD3L

Pin Count
3

JESD-30 Code
R-PSSO-G2

Download datasheets and manufacturer documentation for ST STD3LN62K3.

Datasheets:

stmicroelectronics-stu3ln62k3-datasheets-4334.pdf

stmicroelectronics-std3ln62k3-datasheets-5663.pdf

stmicroelectronics-std3ln62k3-datasheets-5664.pdf

STD3LN62K3 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 386pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD3LN62K3 Features

the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 10A.
a threshold voltage of 3.75V