ST STD25N10F7
ST STD25N10F7

ST STD25N10F7

Manufacturer No:

STD25N10F7

Manufacturer:

ST

Package:

DPAK-3/2

Description:

N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package

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In Stock :7238

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Expected Shipping:Mon, May 11 - Tue, May 12, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

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Step2:Desiccant Protection

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Step3:Vacuum Packaging

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STD25N10F7 Information

ST STD25N10F7 technical specifications, attributes, parameters and parts with similar specifications to ST STD25N10F7.

  • Type
  • Parameter
  • RoHS Status
  • RoHS Compliant
  • Part Life Cycle Code
  • Active
  • Ihs Manufacturer
  • STMICROELECTRONICS
  • Package Description
  • DPAK-3/2
  • Reach Compliance Code
  • not_compliant
  • ECCN Code
  • EAR99
  • Factory Lead Time
  • 26 Weeks
  • Samacsys Manufacturer
  • STMicroelectronics
  • Additional Feature
  • BULK: 2500
  • Case Connection
  • DRAIN
  • Type
  • Parameter
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • DS Breakdown Voltage-Min
  • 100 V
  • Drain Current-Max (ID)
  • 25 A
  • Drain-source On Resistance-Max
  • 0.035 Ω
  • FET Technology
  • METAL-OXIDE SEMICONDUCTOR
  • Feedback Cap-Max (Crss)
  • 19 pF
  • JEDEC-95 Code
  • TO-252
  • JESD-30 Code
  • R-PSSO-G2
  • Number of Elements
  • 1
  • Number of Terminals
  • 2

Download datasheets and manufacturer documentation for ST STD25N10F7.

STD25N10F7 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 920pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [14.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STD25N10F7 Features


a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 14.8 ns


STD25N10F7 Applications


There are a lot of STMicroelectronics
STD25N10F7 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies