ST STD20N20T4
Manufacturer No:
STD20N20T4
Manufacturer:
ST
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 125m ? @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :2176
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STD20N20T4 Information
ST STD20N20T4 technical specifications, attributes, parameters and parts with similar specifications to ST STD20N20T4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Series
- STripFET? II
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -50°C
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 200V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 18A
Download datasheets and manufacturer documentation for ST STD20N20T4.
Datasheets:
STD20N20T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 940pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD20N20T4 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
STD20N20T4 Applications
There are a lot of STMicroelectronics
STD20N20T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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