STD1NK60T4-ST-Price, Stock & Datasheet

STD1NK60T4 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD1NK60T4 Features

the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V