ST STD170N4F7AG

Manufacturer No:

STD170N4F7AG

Manufacturer:

ST

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m ? @ 40A, 10V ±20V 4350pF @ 25V 63nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :1388

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STD170N4F7AG Information

ST STD170N4F7AG technical specifications, attributes, parameters and parts with similar specifications to ST STD170N4F7AG.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
Automotive, AEC-Q101, STripFET?

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Type
Parameter

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
STD17

Power Dissipation-Max
172W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2.8m ? @ 40A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
4350pF @ 25V

Current - Continuous Drain (Id) @ 25°C
80A Tc

Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V

Drain to Source Voltage (Vdss)
40V

Download datasheets and manufacturer documentation for ST STD170N4F7AG.

Datasheets:

stmicroelectronics-std170n4f7ag-datasheets-0446.pdf

STD170N4F7AG Overview

A device's maximum input capacitance is 4350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.