ST STD12NF06-1
Manufacturer No:
STD12NF06-1
Manufacturer:
ST
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 100m ? @ 6A, 10V ±20V 315pF @ 25V 12nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
Quantity:
In Stock :8086
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Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STD12NF06-1 Information
ST STD12NF06-1 technical specifications, attributes, parameters and parts with similar specifications to ST STD12NF06-1.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- STripFET? II
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- not_compliant
- Current Rating
- 12A
Download datasheets and manufacturer documentation for ST STD12NF06-1.
STD12NF06-1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 140 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 315pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STD12NF06-1 Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 48A.
STD12NF06-1 Applications
There are a lot of STMicroelectronics
STD12NF06-1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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