ST STB80NE03L-06T4
Manufacturer No:
STB80NE03L-06T4
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m ? @ 40A, 10V ±20V 6500pF @ 25V 130nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1855
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB80NE03L-06T4 Information
ST STB80NE03L-06T4 technical specifications, attributes, parameters and parts with similar specifications to ST STB80NE03L-06T4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- STripFET?
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Reach Compliance Code
- not_compliant
- Current Rating
- 80A
Download datasheets and manufacturer documentation for ST STB80NE03L-06T4.
STB80NE03L-06T4 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6500pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A maximum pulsed drain current of 320A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STB80NE03L-06T4 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 320A.
STB80NE03L-06T4 Applications
There are a lot of STMicroelectronics
STB80NE03L-06T4 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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