ST STB7NK80Z-1
Manufacturer No:
STB7NK80Z-1
Manufacturer:
ST
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.8 ? @ 2.6A, 10V ±30V 1138pF @ 25V 56nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :7236
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB7NK80Z-1 Information
ST STB7NK80Z-1 technical specifications, attributes, parameters and parts with similar specifications to ST STB7NK80Z-1.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- SuperMESH?
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STB7N
Download datasheets and manufacturer documentation for ST STB7NK80Z-1.
STB7NK80Z-1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1138pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20.8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STB7NK80Z-1 Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 20.8A.
STB7NK80Z-1 Applications
There are a lot of STMicroelectronics
STB7NK80Z-1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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