ST STB75NH02LT4
Manufacturer No:
STB75NH02LT4
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 8m ? @ 30A, 10V ±20V 2050pF @ 15V 22nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :3578
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB75NH02LT4 Information
ST STB75NH02LT4 technical specifications, attributes, parameters and parts with similar specifications to ST STB75NH02LT4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Cut Tape (CT)
- Series
- STripFET? III
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 24V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Current Rating
- 75A
Download datasheets and manufacturer documentation for ST STB75NH02LT4.
STB75NH02LT4 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Peak drain current is 240A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STB75NH02LT4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 240A.
STB75NH02LT4 Applications
There are a lot of STMicroelectronics
STB75NH02LT4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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