STB70NF3LLT4-ST-Price, Stock & Datasheet

STB70NF3LLT4 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

STB70NF3LLT4 Features

the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 280A.
a threshold voltage of 1V